PBSS9110S,126
TRANS PNP 100V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number PBSS9110S-126. This device offers a collector-emitter breakdown voltage of 100V and a continuous collector current of 1A. Key parameters include a maximum power dissipation of 830mW and a transition frequency of 100MHz. The DC current gain (hFE) is specified at a minimum of 150 at 500mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) at 1A collector current and 100mA base current is a maximum of 320mV. This component is housed in a TO-92-3 package with leads suitable for through-hole mounting. It is supplied in Tape & Box packaging and operates at junction temperatures up to 150°C. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 830 mW |
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