PBSS9110AS,126
TRANS PNP 100V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number PBSS9110AS-126. This through-hole TO-92-3 device offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 1A. Featuring a maximum power dissipation of 830mW and a transition frequency of 100MHz, it exhibits a minimum DC current gain (hFE) of 150 at 500mA and 5V. The saturation voltage (Vce(sat)) is specified at 320mV maximum for 100mA base current and 1A collector current, with a collector cutoff current of 100nA. This component is suitable for applications in consumer electronics, industrial control, and power management systems. The device is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 830 mW |
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