PBSS8110S,126
TRANS NPN 100V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. presents the PBSS8110S-126, a single NPN bipolar junction transistor. This component features a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of up to 1 A. With a transition frequency of 100 MHz, it is suitable for applications requiring moderate switching speeds. The minimum DC current gain (hFE) is specified at 150 at 250mA and 10V. Maximum power dissipation is 830 mW. The device is housed in a TO-92-3 package, designed for through-hole mounting, and is supplied in Tape & Box (TB) packaging. This transistor finds application in general-purpose amplification and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 250mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 830 mW |
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