PBSS8110AS,126
TRANS NPN 100V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PBSS8110AS-126 is an NPN bipolar junction transistor designed for robust performance. This component features a collector-emitter breakdown voltage of 100 V and a maximum continuous collector current of 1 A. With a DC current gain (hFE) of at least 150 at 250mA and 10V, it offers significant amplification. The transition frequency is rated at 100 MHz, making it suitable for a variety of switching and amplification applications. Power dissipation is maxed at 830 mW. The device is housed in a TO-92-3 (TO-226-3) through-hole package, supplied in Tape & Box (TB) packaging. Applications include general-purpose amplification and switching in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 250mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 830 mW |
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