PBSS5160K,115
TRANS PNP 60V 0.7A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. PBSS5160K-115 is a PNP bipolar junction transistor designed for surface-mount applications. This component features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 700mA. It offers a transition frequency of 185MHz and a maximum power dissipation of 425mW. The transistor type is PNP, and it is provided in a SMT3; MPAK package, commonly known as TO-236-3, SC-59, or SOT-23-3, supplied on tape and reel. Key electrical parameters include a minimum DC current gain (hFE) of 150 at 500mA and 5V, and a maximum collector-emitter saturation voltage (Vce) of 340mV at 100mA and 1A. The maximum collector cutoff current is 100nA. This transistor is utilized in various industries, including automotive, industrial, and consumer electronics, for applications such as switching and amplification. The operating junction temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 5V |
| Frequency - Transition | 185MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 425 mW |
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