PBSS5140V,315
TRANS PNP 40V 1A SOT666Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PBSS5140V-315 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 1A. It offers a transition frequency of 150MHz and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 300 at 100mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at a maximum of 310mV at 100mA base current and 1A collector current. The device operates over a temperature range of -55°C to 150°C and is supplied in a SOT-666 package, presented on tape and reel. This transistor is commonly utilized in general-purpose amplification and switching circuits across various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-666 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |