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PBSS5140S,126

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PBSS5140S,126

TRANS PNP 40V 1A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. PNP Bipolar Junction Transistor, part number PBSS5140S-126. This device features a 40V collector-emitter breakdown voltage and a continuous collector current capacity of 1A. With a high DC current gain (hFE) of at least 300 at 100mA and 5V, and a transition frequency of 150MHz, it is suitable for general-purpose amplification and switching applications. The transistor offers a maximum power dissipation of 830mW and a saturation voltage (Vce) of 500mV at 100mA collector current and 100mA base current. It is packaged in a TO-92-3 through-hole configuration and supplied in Tape & Box. This component is commonly utilized in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 100mA, 5V
Frequency - Transition150MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max830 mW

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