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PBSS4350S,126

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PBSS4350S,126

TRANS NPN 50V 3A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. PBSS4350S-126 is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 3A. The PBSS4350S-126 features a minimum DC current gain (hFE) of 100 at 2A and 2V, with a transition frequency of 100MHz. Maximum power dissipation is rated at 830mW, with an operating junction temperature of 150°C. Collector cutoff current is specified at a maximum of 100nA. Vce saturation at 2A collector current and 200mA base current is 290mV. This component is suitable for applications in general-purpose amplification and switching, commonly found in consumer electronics and industrial control systems. The unit is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic290mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max830 mW

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