PBSS4350S,126
TRANS NPN 50V 3A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PBSS4350S-126 is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 3A. The PBSS4350S-126 features a minimum DC current gain (hFE) of 100 at 2A and 2V, with a transition frequency of 100MHz. Maximum power dissipation is rated at 830mW, with an operating junction temperature of 150°C. Collector cutoff current is specified at a maximum of 100nA. Vce saturation at 2A collector current and 200mA base current is 290mV. This component is suitable for applications in general-purpose amplification and switching, commonly found in consumer electronics and industrial control systems. The unit is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 290mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 830 mW |
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