PBSS4160K,115
TRANS NPN 60V 0.75A SMT3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PBSS4160K-115 is an NPN bipolar junction transistor designed for robust performance in demanding applications. This SMT3 packaged device offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 750 mA. It features a transition frequency of 220 MHz and a maximum power dissipation of 425 mW at 150°C junction temperature. The minimum DC current gain (hFE) is 200 at 500 mA collector current and 5V collector-emitter voltage, with a Vce(sat) of 280mV at 100mA collector current. The low collector cutoff current of 100nA ensures effective switching. This component is commonly utilized in industrial automation, automotive electronics, and consumer electronics power management circuits. The SMT3; MPAK package is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 280mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 750 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 425 mW |
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