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PBSS4140V,115

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PBSS4140V,115

TRANS NPN 40V 1A SOT666

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. PBSS4140V-115 is a surface-mount NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 1A. With a transition frequency of 150MHz and a power dissipation of 500mW, it offers efficient operation in demanding environments. The minimum DC current gain (hFE) is rated at 300 at 500mA and 5V. The transistor is supplied in a SOT-666 package and is available on tape and reel. Applications include power management, consumer electronics, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic440mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 500mA, 5V
Frequency - Transition150MHz
Supplier Device PackageSOT-666
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max500 mW

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