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PBSS3540E,115

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PBSS3540E,115

TRANS PNP 40V 0.5A SC75

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. PBSS3540E-115 is a PNP bipolar junction transistor featuring a 40V collector-emitter breakdown voltage. This surface mount device, packaged in an SC-75 (SOT-416) case, supports a maximum collector current of 500mA and a transition frequency of 300MHz. It offers a minimum DC current gain (hFE) of 150 at 100mA and 2V, with a Vce(sat) of 350mV at 50mA and 500mA. The maximum power dissipation is 250mW, and it operates at temperatures up to 150°C (TJ). This component is commonly utilized in general-purpose amplification and switching applications across various industrial sectors. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic350mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 100mA, 2V
Frequency - Transition300MHz
Supplier Device PackageSC-75
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max250 mW

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