PBSS3515E,115
TRANS PNP 15V 0.5A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number PBSS3515E-115. This device features a 15V collector-emitter breakdown voltage and a continuous collector current of 500mA. It offers a minimum DC current gain (hFE) of 150 at 100mA and 2V, with a transition frequency of 280MHz. The transistor has a maximum power dissipation of 250mW and a collector cutoff current of 100nA (ICBO). Saturation voltage (Vce Sat) is 250mV at 50mA and 500mA. Operating temperature range is up to 150°C (TJ). This component is housed in an SC-75 (SOT-416) surface mount package and is supplied on tape and reel. It finds application in general-purpose switching and amplification across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA, 2V |
| Frequency - Transition | 280MHz |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 250 mW |
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