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MPSA92,116

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MPSA92,116

TRANS PNP 300V 0.1A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. MPSA92-116 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component offers a 300V collector-emitter breakdown voltage (Vceo) and a maximum continuous collector current (Ic) of 100mA. It features a transition frequency (fT) of 50MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is a minimum of 25 at 30mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV with 2mA base current and 20mA collector current. The device exhibits a low collector cutoff current (Icbo) of 250nA. This transistor is housed in a TO-92-3 (TO-226AA) package with formed leads, suitable for through-hole mounting. The MPSA92-116 is typically utilized in industrial power supplies and consumer electronics. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 30mA, 10V
Frequency - Transition50MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)300 V
Power - Max625 mW

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