MPSA56,116
TRANS PNP 80V 0.5A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. MPSA56-116 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in a TO-92-3 (TO-226-3) configuration, features a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. With a transition frequency of 50MHz and a maximum power dissipation of 625mW, it offers a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V collector-emitter voltage. The saturation voltage at 10mA base current and 100mA collector current is a maximum of 250mV. This device is suitable for use in consumer electronics and industrial control systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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