MPSA42,412
BJT TO92 300V NPN 0.625W 150CManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. MPSA42-412 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 300V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 100mA. With a transition frequency (fT) of 50MHz and a power dissipation of 500mW, it is suitable for use in power supply circuits, high voltage drivers, and general amplification stages. The device exhibits a minimum DC current gain (hFE) of 40 at 30mA and 10V. Packaged in a TO-92-3 (TO-226AA) through-hole configuration and rated for operation up to 150°C, the MPSA42-412 is commonly found in industrial controls, consumer electronics, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 500 mW |
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