MPSA14,116
TRANS NPN DARL 30V 0.5A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. MPSA14-116 is a high-gain NPN Darlington bipolar junction transistor. It features a collector-emitter breakdown voltage of 30V and a maximum collector current of 500mA. With a DC current gain (hFE) of 20000 at 100mA and 5V, and a transition frequency of 125MHz, this device is suitable for amplification and switching applications. The saturation voltage (Vce Sat) is specified at a maximum of 1.5V at 100µA base current and 100mA collector current. This component is housed in a TO-92-3 package and operates at temperatures up to 150°C. The MPSA14-116 finds application in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
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