MPSA06,412
TRANS NPN 80V 0.5A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. MPSA06-412 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 500mA. With a transition frequency of 100MHz and a minimum DC current gain (hFE) of 100 at 100mA and 1V, the MPSA06-412 offers robust performance characteristics. It has a maximum power dissipation of 625mW and a collector cutoff current (ICBO) of 50nA. The device is supplied in a TO-92-3 package, suitable for use in industrial automation, consumer electronics, and telecommunications equipment. The Vce saturation voltage is specified at 250mV maximum for an Ic of 100mA and Ib of 10mA. Operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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