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MPSA06,126

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MPSA06,126

TRANS NPN 80V 0.5A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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The NXP USA Inc. MPSA06-126 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. It exhibits a minimum DC current gain (hFE) of 100 at 100mA collector current and 1V collector-emitter voltage, with a transition frequency of 100MHz. The MPSA06-126 has a maximum power dissipation of 625mW and a Vce saturation of 250mV at 10mA base current and 100mA collector current. Packaged in a TO-92-3 (TO-226AA) through-hole configuration, this component is supplied in Tape & Box packaging. It is commonly utilized in industrial control, consumer electronics, and telecommunications equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition100MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max625 mW

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