MPSA06,116
TRANS NPN 80V 0.5A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. MPSA06-116 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component offers a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. It features a transition frequency of 100MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is specified as a minimum of 100 at 100mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce(sat)) is 250mV maximum at 10mA base current and 100mA collector current. The device is housed in a TO-92-3 package and is supplied on tape and reel. This transistor is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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