BUT12AI,127
TRANS NPN 450V 8A TO220ABManufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BUT12AI-127 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component features a 450V collector-emitter breakdown voltage and a continuous collector current capability of 8A, with a maximum power dissipation of 110W. The transistor exhibits a minimum DC current gain (hFE) of 14 at 1A and 5V. Its saturation voltage (Vce(sat)) is specified at a maximum of 1.5V for an 860mA base current and 5A collector current. The TO-220AB package provides robust thermal performance, suitable for operation up to 150°C (TJ). This device is commonly utilized in power supply units, lighting control, and motor drive circuits across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 860mA, 5A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220AB |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Power - Max | 110 W |
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