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BUT11APX-1200,127

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BUT11APX-1200,127

TRANS NPN 550V 6A TO220F

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

The NXP USA Inc. BUT11APX-1200-127 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component features a 550V collector-emitter breakdown voltage and a continuous collector current rating of 6A, with a maximum power dissipation of 32W. It is supplied in a TO-220F package suitable for through-hole mounting. The transistor exhibits a minimum DC current gain (hFE) of 20 at 500mA and 5V, and a maximum Vce(sat) of 1V at 400mA and 2A. The collector cutoff current is specified at 1mA. Operating temperature range extends up to 150°C (TJ). This device is commonly utilized in power supply units, lighting ballasts, and general-purpose high-voltage switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack, Isolated Tab
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 2A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageTO-220F
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)550 V
Power - Max32 W

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