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BUT11AI,127

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BUT11AI,127

TRANS NPN 450V 5A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. BUT11AI-127 is a high-voltage NPN bipolar junction transistor designed for demanding power applications. This component features a collector-emitter breakdown voltage of 450V and a continuous collector current capability of 5A, with a maximum power dissipation of 100W. The TO-220AB package with through-hole mounting allows for efficient heat dissipation and robust assembly. Key electrical characteristics include a minimum DC current gain (hFE) of 14 at 500mA and 5V, and a saturation voltage (Vce(sat)) of 1.5V at 330mA and 2.5A. The device operates reliably up to a junction temperature of 150°C. This transistor is commonly utilized in power supply units, lighting ballasts, and industrial motor control systems. It is supplied in a tube.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 330mA, 2.5A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageTO-220AB
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)450 V
Power - Max100 W

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