BST16,115
TRANS PNP 300V 0.2A SOT89-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. BST16-115 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 300V and a maximum continuous collector current of 200mA. With a transition frequency of 15MHz and a maximum power dissipation of 1.3W, it is suitable for various switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V Vce. Collector cutoff current (ICBO) is specified at a maximum of 100nA. The saturation voltage (Vce(sat)) is a maximum of 750mV at 5mA base current and 50mA collector current. The BST16-115 is housed in a SOT-89-3 package and operates at temperatures up to 150°C. This component finds utility in power management, general-purpose amplification, and switching circuits across multiple industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.3 W |
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