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BST15,115

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BST15,115

TRANS PNP 200V 0.2A SOT89-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. PNP Bipolar Junction Transistor, part number BST15-115, offers a 200V collector-emitter breakdown voltage and a maximum collector current of 200 mA. This device features a transition frequency of 15 MHz and a DC current gain (hFE) of at least 30 at 50 mA and 10V. With a maximum power dissipation of 1.3 W and an operating junction temperature of 150°C, the BST15-115 is housed in a SOT-89-3 (TO-243AA) package. It exhibits a Vce(sat) of 750mV at 5mA base current and 50mA collector current, with a collector cutoff current (ICBO) of 100nA. This component is suitable for demanding applications in sectors such as industrial controls and telecommunications. The BST15-115 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic750mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 50mA, 10V
Frequency - Transition15MHz
Supplier Device PackageSOT-89-3
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max1.3 W

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