BSR12,215
TRANS PNP 15V 0.1A SOT23Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number BSR12-215. This device features a 15V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 1.5GHz and a power dissipation of 250mW, it is suitable for high-frequency switching and amplification applications. The minimum DC current gain (hFE) is 30 at 50mA and 1V. The transistor is housed in a compact SOT-23 (TO-236AB) surface-mount package, supplied on tape and reel. It operates within a temperature range of 150°C (TJ). This component finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 1V |
| Frequency - Transition | 1.5GHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 250 mW |
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