BF423,112
TRANS PNP 250V 0.05A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BF423-112 is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This component features a maximum collector-emitter breakdown voltage of 250V and a continuous collector current capability of 50mA. The transistor exhibits a minimum DC current gain (hFE) of 50 at 25mA collector current and 20V collector-emitter voltage, with a transition frequency of 60MHz. It is rated for a maximum power dissipation of 830mW and an operating junction temperature of 150°C. The BF423-112 is suitable for applications in general-purpose amplification and switching circuits across various industries requiring reliable bipolar transistor performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 30mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 20V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 830 mW |
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