BF422,116
TRANS NPN 250V 0.05A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BF422-116 is a bipolar junction transistor (BJT) with an NPN configuration. This component features a collector-emitter breakdown voltage of 250 V and a maximum collector current of 50 mA. The BF422-116 offers a transition frequency of 60 MHz and a power dissipation of 830 mW. It has a minimum DC current gain (hFE) of 50 at 25 mA and 20 V. The saturation voltage (Vce Sat) is a maximum of 600 mV at 5 mA base current and 30 mA collector current. The device exhibits a collector cutoff current (ICBO) of 10 nA (max). The NXP USA Inc. BF422-116 is provided in a TO-92-3 package, suitable for through-hole mounting, and is supplied on tape and reel. This transistor finds application in general-purpose amplification and switching circuits across various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 30mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 20V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 830 mW |
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