BF421,112
TRANS PNP 300V 0.05A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BF421-112 is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92-3 package. This device features a maximum collector emitter breakdown voltage of 300V and a continuous collector current capability of 50mA. The BF421-112 offers a transition frequency of 60MHz and a maximum power dissipation of 830mW. It exhibits a minimum DC current gain (hFE) of 50 at 25mA and 20V, with a collector cutoff current (ICBO) of 10nA. The saturation voltage (Vce Sat) is a maximum of 600mV at 5mA base current and 30mA collector current. This component is suitable for applications in general purpose amplification and switching, often found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 30mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 20V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 830 mW |
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