BF420,116
TRANS NPN 300V 0.05A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BF420-116 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector emitter breakdown voltage of 300V and a continuous collector current of 50mA. The BF420-116 offers a transition frequency of 60MHz and a power dissipation of 830mW. It is supplied in a TO-92-3 package suitable for through-hole mounting and is available on tape and reel. Key electrical parameters include a minimum DC current gain (hFE) of 50 at 25mA and 20V, and a Vce saturation of 600mV at 5mA and 30mA. This transistor is utilized in various industrial applications including power supplies, lighting controls, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 30mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 20V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 830 mW |
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