BF420,112
TRANS NPN 300V 0.05A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BF420-112 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 50 mA and a collector emitter breakdown voltage (Vce) of 300 V. With a transition frequency (fT) of 60 MHz and a power dissipation of 830 mW, it offers robust performance in demanding environments. The minimum DC current gain (hFE) is 50 at 25 mA and 20 V. The transistor is packaged in a standard TO-92-3 (TO-226-3) through-hole configuration, suitable for automated assembly. It operates within a temperature range of -55°C to 150°C (TJ). The NXP USA Inc. BF420-112 is commonly utilized in industrial control systems, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 30mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 20V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 830 mW |
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