BF370,112
TRANS NPN 15V 0.1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BF370-112 is a general-purpose NPN bipolar junction transistor (BJT). This through-hole component is housed in a TO-92-3 package. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 15 V. The BF370-112 exhibits a transition frequency of 500 MHz and a maximum power dissipation of 500 mW. DC current gain (hFE) is specified at a minimum of 40 at 10 mA collector current and 1 V collector-emitter voltage. The device is rated for operation at temperatures up to 150°C (TJ). This transistor is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 400nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | 500MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 500 mW |
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