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BF199,112

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BF199,112

TRANS NPN 25V 0.025A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. Bipolar Transistor, NPN, 25V collector-emitter breakdown voltage. This component features a maximum collector current (Ic) of 25 mA and a transition frequency (fT) of 550 MHz. With a maximum power dissipation of 500 mW and an operating junction temperature up to 150°C, it is housed in a TO-92-3 (TO-226-3, TO-92-3 Formed Leads) package suitable for through-hole mounting. Key specifications include a minimum DC current gain (hFE) of 38 at 7mA, 10V, and a collector cutoff current (ICBO) of 100nA. This device is commonly utilized in general-purpose amplification and switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce38 @ 7mA, 10V
Frequency - Transition550MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)25 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max500 mW

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