BC879,112
TRANS NPN DARL 80V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC879-112 is an NPN Darlington bipolar transistor designed for general-purpose amplification and switching applications. This through-hole component, packaged in a TO-92-3 (TO-226AA) case, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a high DC current gain (hFE) of 2000 minimum at 500mA and 10V, and a transition frequency of 200MHz, the BC879-112 is suitable for applications requiring significant current amplification. The device has a maximum power dissipation of 830mW and an operating junction temperature of 150°C. This component is commonly utilized in power supply circuits, motor control, and general industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 830 mW |
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