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BC875,126

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BC875,126

TRANS NPN DARL 45V 1A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. presents the BC875-126, a NPN Darlington bipolar transistor. This component is designed for through-hole mounting in a TO-92-3 package. Key specifications include a collector-emitter breakdown voltage of 45V and a maximum collector current (Ic) of 1A. The DC current gain (hFE) is a minimum of 2000 at 500mA and 10V, with a transition frequency of 200MHz. The maximum power dissipation is 830mW, and it operates at temperatures up to 150°C (TJ). This transistor is suitable for applications within the industrial and consumer electronics sectors. The component is supplied in Tape & Box (TB) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA, 10V
Frequency - Transition200MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max830 mW

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