BC857T,115
TRANS PNP 45V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC857T-115 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum collector current (Ic) of 100mA. The device exhibits a transition frequency of 100MHz and a maximum power dissipation of 150mW. It is qualified to AEC-Q101 standards and rated for automotive applications, operating at junction temperatures up to 150°C. The SC-75 package, also known as SOT-416, houses this transistor, which is supplied on a tape and reel. Key parameters include a minimum DC current gain (hFE) of 125 at 2mA collector current and 5V Vce, and a maximum collector cutoff current (ICBO) of 15nA. The Vce saturation voltage is specified at a maximum of 400mV for 5mA base current and 100mA collector current. This device is suitable for use in automotive electronics and general-purpose amplification and switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |