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BC857T,115

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BC857T,115

TRANS PNP 45V 0.1A SC75

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. BC857T-115 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 45V and a maximum collector current (Ic) of 100mA. The device exhibits a transition frequency of 100MHz and a maximum power dissipation of 150mW. It is qualified to AEC-Q101 standards and rated for automotive applications, operating at junction temperatures up to 150°C. The SC-75 package, also known as SOT-416, houses this transistor, which is supplied on a tape and reel. Key parameters include a minimum DC current gain (hFE) of 125 at 2mA collector current and 5V Vce, and a maximum collector cutoff current (ICBO) of 15nA. The Vce saturation voltage is specified at a maximum of 400mV for 5mA base current and 100mA collector current. This device is suitable for use in automotive electronics and general-purpose amplification and switching circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce125 @ 2mA, 5V
Frequency - Transition100MHz
Supplier Device PackageSC-75
GradeAutomotive
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Power - Max150 mW
QualificationAEC-Q101

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