BC857BT,115
TRANS PNP 45V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor (BJT), part number BC857BT-115, offers a 45V collector-emitter breakdown voltage and a maximum collector current of 100 mA. This AEC-Q101 qualified component features a transition frequency of 100 MHz and a minimum DC current gain (hFE) of 220 at 2 mA, 5V. The device operates at a maximum power dissipation of 150 mW and can handle junction temperatures up to 150°C. Designed for surface mounting, it is supplied in the SC-75 (SOT-416) package, presented on a tape and reel. This component is suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |