BC856T,115
TRANS PNP 65V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC856T-115 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 65V and a maximum continuous collector current of 100mA. With a transition frequency of 100MHz and a maximum power dissipation of 150mW, it is suitable for general-purpose amplification and switching. The device exhibits a minimum DC current gain (hFE) of 125 at 2mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is rated at a maximum of 400mV at 5mA base current and 100mA collector current. Packaged in an SC-75 (SOT-416) surface-mount case and supplied on tape and reel, this AEC-Q101 qualified component is ideal for automotive applications. The collector cutoff current (ICBO) is a maximum of 15nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
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