BC856BT,115
TRANS PNP 65V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor (BJT), part number BC856BT-115. This automotive-grade device offers a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA. Featuring a transition frequency of 100MHz, it is suitable for high-frequency switching and amplification applications. The transistor exhibits a minimum DC current gain (hFE) of 220 at 2mA collector current and 5V collector-emitter voltage. Maximum power dissipation is 150mW. The BC856BT-115 is supplied in an SC-75 (SOT-416) surface-mount package on tape and reel. It is qualified to AEC-Q101 standards and operates at junction temperatures up to 150°C. This component is commonly utilized in automotive electronics and general-purpose amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
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