BC856AT,115
TRANS PNP 65V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC856AT-115 is a PNP bipolar junction transistor designed for surface mount applications. This device features a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 100MHz and a power dissipation of 150mW, it is suitable for general-purpose amplification and switching in automotive applications. The SC-75 (SOT-416) package ensures compact integration onto printed circuit boards. Key parameters include a low collector cutoff current of 15nA (ICBO) and a minimum DC current gain (hFE) of 125 at 2mA collector current and 5V Vce. Saturation voltage is specified at 400mV maximum for 5mA base current driving 100mA collector current. The component is qualified to AEC-Q101 standards and supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
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