BC847T,115
TRANS NPN 45V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC847T-115 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 45V and a maximum continuous collector current of 100mA. It features a transition frequency of 100MHz and a maximum power dissipation of 150mW. The device exhibits a minimum DC current gain (hFE) of 110 at 2mA collector current and 5V collector-emitter voltage. Saturation voltage at 5mA base current and 100mA collector current is 400mV. The BC847T-115 is qualified to AEC-Q101 standards, indicating its suitability for automotive applications, and operates at an ambient temperature up to 150°C. It is supplied in an SC-75 (SOT-416) package and is delivered on a tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
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