BC847AT,115
TRANS NPN 45V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. BC847AT-115 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a maximum collector emitter breakdown voltage of 45V and a continuous collector current capability of 100mA. With a transition frequency of 100MHz and a power dissipation of 150mW, it is suitable for general-purpose amplification and switching tasks. The device offers a minimum DC current gain (hFE) of 110 at 2mA collector current and 5V collector emitter voltage. Its saturation voltage (Vce(sat)) is specified at a maximum of 400mV with 5mA base current and 100mA collector current. The BC847AT-115 is qualified to AEC-Q101 standards and operates within an automotive grade temperature range up to 150°C. Supplied in an SC-75 (SOT-416) package, it is available on tape and reel. This transistor finds application in automotive electronics and general industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |