BC640,126
TRANS PNP 80V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC640-126 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A. The DC current gain (hFE) is a minimum of 63 at 150mA collector current and 2V collector-emitter voltage. The transition frequency is rated at 145MHz, and the maximum power dissipation is 830mW. It offers a Vce(sat) of 500mV at 50mA base current and 500mA collector current. The transistor is housed in a TO-92-3 (TO-226-3) package with formed leads, suitable for through-hole mounting. The operating junction temperature range extends to 150°C. This device is commonly utilized in consumer electronics, industrial control systems, and automotive applications. Packaging is supplied in Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 145MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 830 mW |
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