BC640,116
TRANS PNP 80V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number BC640-116. This TO-92-3 packaged device features a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. It offers a minimum DC current gain (hFE) of 63 at 150mA and 2V, with a transition frequency of 145MHz. The BC640-116 has a maximum power dissipation of 830mW and an operating junction temperature of 150°C. Collector cutoff current (ICBO) is specified at 100nA. Saturation voltage (Vce(sat)) is 500mV at 50mA collector current and 50mA base current. This component is suitable for applications in general-purpose amplification and switching, commonly found in industrial control systems and consumer electronics. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 145MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 830 mW |
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