BC640,112
TRANS PNP 80V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC640-112 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This through-hole component features a TO-92-3 package, offering a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A. With a power dissipation of 830 mW and a transition frequency of 145MHz, it is suitable for use in telecommunications and industrial control systems. The device exhibits a minimum DC current gain (hFE) of 63 at 150mA and 2V, with a Vce(sat) of 500mV at 50mA and 500mA. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 145MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 830 mW |
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