BC639,126
TRANS NPN 80V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC639-126 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This through-hole component, packaged in a TO-92-3 (TO-226-3) case, offers a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A. Key electrical characteristics include a minimum DC current gain (hFE) of 63 at 150mA and 2V, a transition frequency of 180MHz, and a maximum collector emitter saturation voltage of 500mV at 50mA and 500mA. The device dissipates a maximum power of 830mW and operates at junction temperatures up to 150°C. This component is commonly utilized in consumer electronics and industrial control systems. It is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 830 mW |
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