BC638,126
TRANS PNP 60V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP Bipolar Junction Transistor, part number BC638-126. This general-purpose transistor offers a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 830mW, it is suitable for amplification and switching applications. Key parameters include a minimum DC current gain (hFE) of 63 at 150mA and 2V, and a Vce(sat) of 500mV at 50mA/500mA. The component operates within a junction temperature range of 150°C and is housed in a TO-92-3 package. This device is commonly utilized in industrial, automotive, and consumer electronics for signal conditioning and control. It is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 830 mW |
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