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BC638,116

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BC638,116

TRANS PNP 60V 1A TO92-3

Manufacturer: NXP USA Inc.

Categories: Single Bipolar Transistors

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NXP USA Inc. PNP Bipolar Junction Transistor, part number BC638-116. This device offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 1A. It features a transition frequency of 100MHz and a maximum power dissipation of 830mW. The minimum DC current gain (hFE) is specified at 63 at 150mA and 2V. The saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA base current and 500mA collector current. Collector cutoff current (ICBO) is a maximum of 100nA. This component is supplied in a TO-92-3 through-hole package, presented on Tape & Reel. The operating junction temperature range extends to 150°C. This transistor finds application in various industrial and consumer electronics, including power supply regulation and switching circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max830 mW

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