BC638,112
TRANS PNP 60V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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The NXP USA Inc. BC638-112 is a PNP bipolar transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 830mW, it offers robust performance for demanding designs. The transistor exhibits a minimum DC current gain (hFE) of 63 at 150mA and 2V, with a Vce(sat) of 500mV at 50mA and 500mA. Packaged in a TO-92-3 (TO-226AA) through-hole configuration, the BC638-112 is suitable for use in industrial automation, consumer electronics, and telecommunications equipment. Its low collector cutoff current of 100nA (ICBO) and an operating junction temperature up to 150°C further enhance its utility in various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 830 mW |
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