BC635,112
TRANS NPN 45V 1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. BC635-112 is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 45 V and a continuous collector current capability of 1 A. It exhibits a minimum DC current gain (hFE) of 63 at 150 mA collector current and 2 V collector-emitter voltage. The transition frequency is rated at 180 MHz, and the maximum power dissipation is 830 mW. The BC635-112 is housed in a TO-92-3 (TO-226-3) package with through-hole mounting. It operates across a junction temperature range of -55°C to 150°C. This device finds utility in various industrial and consumer electronics, including audio amplification stages and low-power switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 830 mW |
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