BC559C,116
TRANS PNP 30V 0.1A TO92-3Manufacturer: NXP USA Inc.
Categories: Single Bipolar Transistors
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NXP USA Inc. PNP bipolar transistor, part number BC559C-116. This through-hole component is housed in a TO-92-3 package. It offers a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vce) of 30 V. The device features a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, with a transition frequency of 100 MHz. Maximum power dissipation is 500 mW, and the operating junction temperature can reach 150°C. Key parameters include a collector cutoff current (ICBO) of 15 nA and a Vce saturation of 650 mV at 5 mA/100 mA. This BJT is suitable for applications in consumer electronics and general-purpose amplification. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
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